Profil

VIGNOLI Stéphane
VIGNOLI Stéphane
Equipe:
Team:
(Nano)matériaux pour l'Energie
Téléphone: 0472432958
Fax: 0472431592
Bureau: Brillouin 13-022
Position: MCF
Email: Stephane.Vignoli@univ-lyon1.fr
3 publications à l'ILM ces 5 dernières années. Voir les 21 pubblications des 15 dernières années.
Silicon nanowire/poly(3-hexylthiophene) hybrids for thin film solar cells
Davenas J. Beyou E. Balloffet A. Cornu D. Vignoli S.
Journal of Non-crystalline Solids, vol. 358, p. Journal of Non-crystalline Solids (2012)
Influence of surface plasmon propagation on leakage radiation microscopy imaging
Guebrou S. Aberra Laverdant J. Symonds C. Vignoli S. Bessueille F. Bellessa J.
Applied Physics Letters, vol. 101, p. Applied Physics Letters (2012)
Correlation of structural inhomogeneities with transport properties in amorphous silicon germanium alloy thin films
Bhaduri A. Chaudhuri P. Vignoli S. Longeaud C.
Solar Energy Materials And Solar Cells, vol. 94, p. Solar Energy Materials And Solar Cells (2010)
Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition
Bhaduri A. Chaudhuri P. Williamson D. L. Vignoli S. Ray P. P. Longeaud C.
Journal Of Applied Physics, vol. 104, p. Journal Of Applied Physics (2008)
High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method
Chaudhuri P. Bhaduri A. Bandyopadhyay A. Vignoli S. Ray P. P. Longeaud C.
Journal Of Non-Crystalline Solids, vol. 354, p. Journal Of Non-Crystalline Solids (2008)
Deposition of ultraviolet photoconductive films of amorphous hydrogenated carbon
Gupta N. Dutta Longeaud C. Bazin C. Vignoli S. Paillard V. Bandyopadhyay A. Bhaduri A. Chaudhuri P.
Journal of Applied Physics, vol. 101, p. Journal of Applied Physics (2007)
Some properties of amorphous carbon films deposited on the grounded electrode of a RF-PECVD reactor from Ar-CH4 mixtures
Gupta Namita Dutta Longeaud C. Chaudhuri P. Bhaduri A. Vignoli S.
Journal of Non-crystalline Solids, vol. 352, p. Journal of Non-crystalline Solids (2006)
Hydrogenated amorphous silicon-carbon alloys obtained from Ar-SiH4-CH4 gas mixtures: Structural and transport properties
Vignoli S. Chaudhuri P. Bhaduri A. Gupta N. Dutta Longeaud C.
Journal of Non-crystalline Solids, vol. 352, p. Journal of Non-crystalline Solids (2006)
Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films
Meaudre M. Gueunier-Farret M. E. Meaudre R. Kleider J. P. Vignoli S. Canut B.
Journal Of Applied Physics, vol. 98, p. Journal Of Applied Physics (2005)
Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties
Vignoli S. Melinon P. Masenelli B. Cabarrocas P. R. I. Flank A. M. Longeaud C.
Journal Of Physics-Condensed Matter, vol. 17, p. Journal Of Physics-Condensed Matter (2005)
Powder evolution at low powers in silane-argon discharge
Chaudhuri P. Gupta N. D. Bhaduri A. Longeaud C. Vignoli S. Marty O.
Journal of Applied Physics, vol. 98, p. Journal of Applied Physics (2005)
Structural properties and recombination processes in hydrogenated polymorphous silicon
Meaudre R. Butte R. Vignoli S. Meaudre M. Saviot L. Marty O. Cabarrocas P. R. I.
European Physical Journal-Applied Physics, vol. 22, p. European Physical Journal-Applied Physics (2003)
Links between hydrogen bonding, residual stress, structural properties and metastability in hydrogenated nanostructured silicon thin films
Vignoli S. Butte R. Meaudre R. Meaudre M. Brenier R.
Journal of Physics-condensed Matter, vol. 15, p. Journal of Physics-condensed Matter (2003)
Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents
Meaudre M. Meaudre R. Vignoli S. Marty O.
Journal of Non-crystalline Solids, vol. 299, p. Journal of Non-crystalline Solids (2002)
A simple model to describe AC electronic charge transport in hydrogenated micro crystalline silicon
Meaudre R. Meaudre M. Vignoli S.
Materials Science and Engineering B-solid State Materials For Advanced Technology, vol. 94, p. Materials Science and Engineering B-solid State Materials For Advanced Technology (2002)
Properties of Si : H thin films deposited by rf-PECVD of silane-argon mixtures with variation of the plasma condition
Ray P. P. Gupta N. D. Chaudhuri P. Williamson D. L. Vignoli S. Longeaud C.
Journal of Non-crystalline Solids, vol. 299, p. Journal of Non-crystalline Solids (2002)
Evolution with light-soaking of polymorphous material prepared at 423 K
Roy D. Longeaud C. Saadane O. Gueunier M. E. Vignoli S. Butte R. Meaudre R. Meaudre M.
Journal of Non-crystalline Solids, vol. 299, p. Journal of Non-crystalline Solids (2002)
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
Vignoli S. Morral A. F. I. Butte R. Meaudre R. Meaudre M.
Journal of Non-crystalline Solids, vol. 299, p. Journal of Non-crystalline Solids (2002)
Electronic properties of Erbium doped amorphous silicon
Kleider J. P. Longeaud C. Meaudre R. Meaudre M. Vignoli S. Koughia K. V. Terukov E. I.
Materials Science and Engineering B-solid State Materials For Advanced Technology, vol. 81, p. Materials Science and Engineering B-solid State Materials For Advanced Technology (2001)
Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150 degrees C
Butte R. Vignoli S. Meaudre M. Meaudre R. Marty O. Saviot L. Cabarrocas P. R. I.
Journal of Non-crystalline Solids, vol. 266, p. Journal of Non-crystalline Solids (2000)
Thermoelectric power in undoped hydrogenated polymorphous silicon
Meaudre R. Meaudre M. Butte R. Vignoli S.
Thin Solid Films, vol. 366, p. Thin Solid Films (2000)
Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon
Butte R. Meaudre R. Meaudre M. Vignoli S. Longeaud C. Kleider J. P. Cabarrocas P. R. I.
Philosophical Magazine B-physics of Condensed Matter Statistical Mechanics Electronic Optical and Ma, vol. 79, p. Philosophical Magazine B-physics of Condensed Matter Statistical Mechanics Electronic Optical and Ma (1999)
Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
Kleider J. P. Longeaud C. Gauthier M. Meaudre M. Meaudre R. Butte R. Vignoli S. Cabarrocas P. R. I.
Applied Physics Letters, vol. 75, p. Applied Physics Letters (1999)
Midgap density of states in hydrogenated polymorphous silicon
Meaudre M. Meaudre R. Butte R. Vignoli S. Longeaud C. Kleider J. P. Cabarrocas P. R. I.
Journal of Applied Physics, vol. 86, p. Journal of Applied Physics (1999)
Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation
Meaudre R. Meaudre M. Butte R. Vignoli S.
Philosophical Magazine Letters, vol. 79, p. Philosophical Magazine Letters (1999)
Structural properties depicted by optical measurements in hydrogenated polymorphous silicon
Vignoli S. Butte R. Meaudre R. Meaudre M. Cabarrocas P. R. I.
Journal of Physics-condensed Matter, vol. 11, p. Journal of Physics-condensed Matter (1999)
Metastable defect creation and annealing under illumination in intrinsic hydrogenated amorphous silicon deposited from helium silane mixtures
Vignoli S. Meaudre R. Meaudre M.
Philosophical Magazine B-Physics Of Condensed Matter Statistical Mechanics Electronic Optical And Ma, vol. 73, p. Philosophical Magazine B-Physics Of Condensed Matter Statistical Mechanics Electronic Optical And Ma (1996)
Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions
Vignoli S. Meaudre R. Meaudre M. Cabarrocas P. R. Godet C. Morin P.
Journal Of Non-Crystalline Solids, vol. 200, p. Journal Of Non-Crystalline Solids (1996)
Dc Conduction In Diamond-Like Carbon-Films Obtained By Low-Energy Cluster Beam Deposition
PAILLARD V. MEAUDRE M. MELINON P. DUPUIS V. PEREZ J. P. VIGNOLI S. PEREZ A. MEAUDRE R.
Journal Of Non-Crystalline Solids, vol. 191, p. Journal Of Non-Crystalline Solids (1995)
Thermal Annealing Of Light-Induced Defects In Hydrogenated Amorphous-Silicon - Evidence For Hole-Induced Annealing
MEAUDRE R. VIGNOLI S. MEAUDRE M.
Philosophical Magazine Letters, vol. 69, p. Philosophical Magazine Letters (1994)
Equilibrium Temperature In Intrinsic Hydrogenated Amorphous-Silicon Under Illumination
VIGNOLI S. MEAUDRE R. MEAUDRE M.
Physical Review B, vol. 50, p. Physical Review B (1994)
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