Straintronic in a new phase of InP
Denis Machon (teamEnergie) has published, with colleagues from the "Institut des Nanotechnologies de Lyon", a paper entitled «Pressure-dependent photoluminescence study of wurtzite InP nanowires» in the journal Nanoletters.
The InP semiconductor crystallizes in a cubic phase at ambient conditions. When synthesized as nanowires, a new hexagonal structure can be stabilized. This effect allows for studying the physical properties of this new phase. In this work, the authors followed the bandgap (electronic structure) and its coupling with the strain. They measured the photoluminescence of the nanowires as a function of pressure. These experimental results have been compared to several theoretical simulations and allow validating one in particular.
03/05/2016 