Profil

Nom:

Name:

GASSENQ Alban

Equipe(s):

Team(s):

Matériaux et Nanostructures Photoniques

Position:

Enseignant-chercheur

Mel:

Mail:

alban.gassenq@univ-lyon1.fr

Tél(s):

Phone(s):

0472431208

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Suiv.

Dernière page

Refractive Index Evaluation in Active TDBC Layers for Photonics Applications

Komlan Gadedjisso-Tossou, Tessa Albaric, Adam Habouria, Deru Lian, Clémentine Symonds, Jean-Michel Benoit, Joel Bellessa, Alban Gassenq

Photonics, vol. 11, p802 (2024)

Infrared micro-emitters made by pulsed laser deposition lift-off-based processing

Alban Gassenq, Yannick Guyot, E. Cleyet-Merle, Sébastien Cueff, Hai Son Nguyen, A. Pereira

Applied physics. A, Materials science & processing, vol. 129, p268 (2023)

High-Responsivity Planar Photodetector Based on Methylammonium Lead Bromide Perovskite Thin Film

Pavlo Mai, Julien Houel, Nathan Dreveton, Benoit Mahler, Alban Gassenq

Photonics, vol. 10, p1043 (2023)

Confined Tamm plasmon light-emitting diodes

Clémentine Symonds, V. Toanen, Alban Gassenq, Jean-Michel Benoit, Antonio A. Pereira, Etienne Cleyet-Merle, Rémy Fulcrand, François Bessueille, S. Minot, Martina Morassi, Aristide Lemaître, Joel Bellessa

Applied Physics Letters, vol. 122 (2023)

Diffraction grating enhanced photoluminescence from etching-free erbium thin films

Alban Gassenq, H-S Nguyen, E. Cleyet-Merle, Sébastien Cueff, A. Pereira

Optics Letters, vol. 48, p2893 (2023)

Plasmon-Mediated Energy Transfer between Two Systems out of Equilibrium

Camilo R Pérez de la Vega, Elise Bailly, Kévin Chevrier, B. Vest, Jean-Paul Hugonin, Antoine Bard, Alban Gassenq, Clémentine Symonds, Jean-Michel Benoit, Joel Bellessa, Jean-Jacques Greffet, Yannick De Wilde, Valentina Krachmalnicoff

ACS photonics, vol. 10, p1169-1176 (2023)

Raman investigation of local photo‐bleaching in TDBC dye layer for photonics applications

Alban Gassenq, Yves Pipon, Gilles Montagnac, Olivier Boisron, Valérie Martinez, Antoine Bard, Jean‐michel Benoit, Clémentine Symonds, Joel Bellessa

Journal of Raman Spectroscopy, vol. 53, p755-761 (2022)

Infrared and visible micro-emitters made by lift-off processing in pulsed laser deposited layers

Alban Gassenq, Etienne Cleyet-Merle, Yannick Guyot, Hai Son Nguyen, Sébastien Cueff, Antonio A. Pereira

, pIW2B.4 (2022)

SiN half-etch horizontal slot waveguides for integrated photonics: numerical modeling, fabrication, and characterization of passive components

Eva Kempf, Pedro Rojo Romeo, Alban Gassenq, Arnaud Taute, Paul Chantraine, Jimmy John, Ali Belarouci, Stephane Monfray, Frederic Boeuf, Paul G. Charette, Régis Orobtchouk

Optics Express, vol. 30, p4202-4214 (2022)

Extended Hybridization and Energy Transfer in Periodic Multi‐Material Organic Structures in Strong Coupling with Surface Plasmon

Antoine Bard, Sylvain Minot, Clémentine Symonds, Jean‐Michel Benoit, Alban Gassenq, François Bessueille, Bruno Andrioletti, Camilo Perez, Kévin Chevrier, Yannick de Wilde, Valentina Krachmalnicoff, Joel Bellessa

Advanced Optical Materials, p2200349 (2022)

Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate

Alban Gassenq, Etienne Cleyet-Merle, Hoshang Sahib, Bruno Baguenard, Ali Belarouci, Régis Orobtchouk, Frederic Lerouge, Stephan Guy, Antonio A. Pereira

Optics Express, vol. 29, p7321-7326 (2021)

Study of dye local photo-bleaching obtained by UV lithography for photonics applications

Alban Gassenq, Kevin Chevrier, Antoine Bard, Jean-Michel Benoit, Clémentine Symonds, Joel Bellessa

, p1-1 (2021)

Selective grating obtained by dye micro-structuration based on local photo- bleaching using laser writer

Alban Gassenq, Kevin Chevrier, Antoine Bard, Jean-Michel Benoit, Clémentine Symonds, Joël Bellessa

Applied optics, vol. 59, p5697-5701 (2020)

Room-Temperature Lasing in a Low-Loss Tamm Plasmon Cavity

Vincent Toanen, Clémentine Symonds, Jean-Michel Benoit, Alban Gassenq, Aristide Lemaître, Joël Bellessa

ACS photonics, vol. 7, p2952-2957 (2020)

Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4

Thibault Haffner, Mohammed Zeghouane, Franck Bassani, P. Gentile, Alban Gassenq, Fares Chouchane, Nicolas Pauc, Eugénie Martinez, Eric Robin, S. David, T. Baron., Bassem Salem

Physica Status Solidi A (applications and materials science), vol. 215, p1700743 (2018)

Accurate strain measurements in highly strained Ge microbridges

Alban Gassenq, S. Tardif, Kevin Guilloy, G. Osvaldo Dias, Nicolas Pauc, Ivan Duchemin, Denis Rouchon, Jean-Michel Hartmann, Julie Widiez, Jose Escalante, Yann Michel Niquet, R. Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Alexei Chelnokov, François Rieutord, Vincent Reboud, Vincent Calvo

Applied Physics Letters, vol. 108, p241902 (2016)