Profil

Nom:Name:GASSENQ Alban
Position:Position:Enseignant-chercheur
Mel:Mail:alban.gassenq[at]univ-lyon1.fr
Equipe:Team:Matériaux et Nanostructures Photoniques
Bureau(x):Office(s):KASTLER / 4ème / 14-004
Tél(s):Phone(s):0472431208
19 publications à l'ILM ces 5 dernières années. 19 publications at ILM in the last 5 years. Voir les 39 publications des 15 dernières années. See 39 publications from the last 15 years.

40 publication(s) affichée(s) 40 publication(s) shown
Selective grating obtained by dye micro-structuration based on local photo- bleaching using laser writer BIB HAL DOI
Alban Gassenq, Kevin Chevrier, Antoine Bard, Jean-Michel Benoit, Clémentine Symonds, Joël Bellessa
Applied optics, vol. 59, p. 5697-5701, (2020)
Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4 BIB HAL DOI
Thibault Haffner, Mohammed Zeghouane, Franck Bassani, P. Gentile, Alban Gassenq, Fares Chouchane, Nicolas Pauc, Eugénie Martinez, Eric Robin, S. David, T. Baron., Bassem Salem
Physica Status Solidi A (applications and materials science), vol. 215, p. 1700743, (2018)
STRUCTURE SEMICONDUCTRICE COMPORTANT UNE MEMBRANE SUSPENDUE A PORTION CENTRALE STRUCTUREE EN EPAISSEUR BIB HAL
STRUCTURE SEMICONDUCTRICE COMPORTANT UNE MEMBRANE SUSPENDUE A PORTION CENTRALE STRUCTUREE EN EPAISSEUR BIB HAL
Vincent Reboud, Alban Gassenq, S. Tardif, Vincent Calvo, Alexei Tchelnokov
(2017)
Nonlinear direct band gap and Raman shift strain dependence in germanium under high uniaxial stress BIB HAL
Nonlinear direct band gap and Raman shift strain dependence in germanium under high uniaxial stress BIB HAL
Kevin Guilloy, Alban Gassenq, Nicolas Pauc, S. Tardif, François Rieutord, François Rieutord, J.M. Escalante, Ivan Duchemin, Y. M. Niquet, P. Gentile, Guilherme Osvaldo Dias, Denis Rouchon, J. Widiez, J.M. Hartmann, Alexei Chelnokov, Richard Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Vincent Reboud, Vincent Calvo
(2016)
Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications BIB HAL DOI
Kévin Guilloy, Alban Gassenq, N. Pauc, J.M. Escalante, I. Duchemin, Yann-Michel Niquet, S. Tardif, François Rieutord, P. Gentile, Guilherme Osvaldo Dias, Denis Rouchon, Julie Widiez, J.M. Hartmann, D. Fowler, Alexei Chelnokov, Richard Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Vincent Reboud, Vincent Calvo
(2016)
Accurate strain measurements in highly strained Ge microbridges BIB HAL DOI
Alban Gassenq, S. Tardif, Kevin Guilloy, G. Osvaldo Dias, Nicolas Pauc, Ivan Duchemin, Denis Rouchon, Jean-Michel Hartmann, Julie Widiez, Jose Escalante, Yann Michel Niquet, R. Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Alexei Chelnokov, François Rieutord, Vincent Reboud, Vincent Calvo
Applied Physics Letters, vol. 108, p. 241902, (2016)
Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain BIB HAL DOI
Kevin Guilloy, Nicolas Pauc, Alban Gassenq, Yann-Michel Niquet, Jose-Maria Escalante, Ivan Duchemin, S. Tardif, Guilherme Osvaldo Dias, Denis Rouchon, Julie Widiez, Jean-Michel Hartmann, Richard Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo
ACS photonics, vol. 3, p. 1907-1911, (2016)
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content BIB HAL DOI
Alban Gassenq, L. Milord, J. Aubin, Kevin Guilloy, S. Tardif, Nicolas Pauc, Johan Rothman, Alexei Chelnokov, Jean-Michel Hartmann, Vincent Reboud, Vincent Calvo
Applied Physics Letters, vol. 109, p. 242107, (2016)
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering BIB HAL DOI
S. Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme Osvaldo Dias, Jean-Michel Hartmann, Julie Widiez, Thomas Zabel, Esteban Marin, Hans Sigg, Jerome Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, Jean-Sébastien Micha, Odile Robach, François Rieutord
Journal of Applied Crystallography, vol. 49, p. 1402-1411, (2016)
OPTICAL SPECTROSCOPY AND X-RAY MICRODIFFRACTION STUDY OF HIGHLY STRAINED GE NANOSTRUCTURES BIB HAL
OPTICAL SPECTROSCOPY AND X-RAY MICRODIFFRACTION STUDY OF HIGHLY STRAINED GE NANOSTRUCTURES BIB HAL
Kevin Guilloy, Nicolas Pauc, Alban Gassenq, P. Gentile, S. Tardif, François Rieutord, Vincent Calvo, J.M. Escalante, Ivan Duchemin, Y. M. Niquet, Guilherme Osvaldo Dias, Denis Rouchon, J. Widiez, J.M. Hartmann, Alexei Chelnokov, Vincent Reboud, Richard Geiger, Thomas Zabel, Hans Sigg, Jerome Faist
(2015)
Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction BIB HAL
Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction BIB HAL
Kevin Guilloy, Nicolas Pauc, Alban Gassenq, P. Gentile, S. Tardif, François Rieutord, Vincent Calvo
(2015)
Direct bandgap redshift of strained germanium nanowires measured by photocurrent spectroscopy BIB HAL
Direct bandgap redshift of strained germanium nanowires measured by photocurrent spectroscopy BIB HAL
Kevin Guilloy, Nicolas Pauc, P. Gentile, S. Tardif, François Rieutord, Alban Gassenq, Vincent Calvo
(2015)
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications BIB HAL DOI
Nicolas Pauc, Denis Rouchon, Jean-Michel Hartmann, Julie Widiez, S. Tardif, François Rieutord, Jose-Maria Escalante, Ivan Duchemin, Yann Michel Niquet, R. Geiger, Thomas Zabel, H. Sigg, J. Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, Alban Gassenq, Kevin Guilloy, G. Osvaldo Dias
Applied Physics Letters, vol. 107, p. 191904, (2015)
Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction BIB HAL DOI
Kevin Guilloy, Nicolas Pauc, Alban Gassenq, P. Gentile, S. Tardif, François Rieutord, Vincent Calvo
Nano Letters, vol. 15, p. 2429-2433, (2015)
Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range BIB HAL DOI
Roel Roelkens, Utsav Dave, Alban Gassenq, Nannicha Hattasan, Chen Hu, Bart Kuyken, Francois Leo, Aditya Malik, Muhammad Muneeb, Eva Ryckeboer, Dorian Sanchez, Sarah Uvin, Ruijun Wang, Zeger Hens, Roel Baets, Yosuke Shimura, Federica Gencarelli, Benjamin Vincent, Roger Loo, Joris van Campenhout, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Xia Chen, Milos Nedeljkovic, Goran Z. Mashanovich, Li Shen, Noel Healy, Anna C. Peacock, Xiaoping Liu, Richard Osgood, William M. J. Green
IEEE Journal of Selected Topics in Quantum Electronics, vol. 20, p. 394 - 404, (2014)
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared BIB HAL DOI
Roel Roelkens, Utsav Dave, Alban Gassenq, Nannicha Hattasan, Chen Chen, Bart Kuyken, Francois Leo, Aditya Malik, Muhammad Muneeb, Eva Ryckeboer, Sarah Uvin, Zeger Hens, Roel Baets, Yosuke Shimura, Federica Gencarelli, Benjamin Vincent, Roger Loo, Joris van Campenhout, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Xia Chen, Milos Nedeljkovic, Goran Z. Mashanovich, Li Shen, Noel Healy, Anna C. Peacock, Xiaoping Liu, Richard Osgood, William Green
Optical Materials Express, vol. 3, (2013)
III–V/Silicon Photonics for Short-Wave Infrared Spectroscopy BIB HAL DOI
Günther Roelkens, William M. J. Green, Bart Kuyken, Xiaoping Liu, Nannicha Hattasan, Alban Gassenq, Laurent Cerutti, Jean-Baptiste Rodriguez, Richard M. Osgood, Eric Tournié, Roel G. Baets
IEEE Journal of Quantum Electronics, vol. 48, p. 292 - 298, (2012)
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip BIB HAL DOI
Alban Gassenq, Nannicha Hattasan, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Günther Roelkens
Optics Express, vol. 20, (2012)
Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit BIB HAL DOI
Nannicha Hattasan, Alban Gassenq, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Günther Roelkens
IEEE Photonics Technology Letters, vol. 23, p. 1760 - 1762, (2011)
Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction BIB HAL DOI
Arnaud Ducanchez, Laurent Cerutti, Alban Gassenq, Pierre Grech, Frédéric Genty
IEEE Journal of Selected Topics in Quantum Electronics, vol. 14, p. 1014 - 1021, (2008)
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