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Profil

Stéphane VIGNOLI
Nom:Name:VIGNOLI Stéphane
Position:Position:Enseignant-chercheur
Mel:Mail:stephane.vignoli[at]univ-lyon1.fr
Equipe:Team:Transport, Nanomagnétisme et Matériaux pour l'Énergie
Bureau(x):Office(s):BRILLOUIN / 3ème / 13-022A
Tél(s):Phone(s):0472432958
2 publications à l'ILM ces 5 dernières années. 2 publications at ILM in the last 5 years. Voir les 7 publications des 15 dernières années. See 7 publications from the last 15 years.

37 publication(s) affichée(s) 37 publication(s) shown
Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties BIB HAL DOI
Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties DOI BIB HAL
Vignoli, S, P. Mélinon, Bruno Masenelli, Pere Roca I Cabarrocas, A.M. Flank, Christophe Longeaud
Journal of Physics: Condensed Matter, vol. 17, p. 1279-1288, (2005)
Hydrogenated amorphous silicon-carbon alloys obtained from Ar-SiH4 – CH4 gas mixtures : structural and transport properties BIB HAL
Hydrogenated amorphous silicon-carbon alloys obtained from Ar-SiH4 – CH4 gas mixtures : structural and transport properties BIB HAL
Vignoli, S, P. Chaudhuri, A. Bhaduri, Namita Dutta Gupta, Christophe Longeaud
(2005)
Effect of evolution of powders on a-Si:H samples in silane-argon plasma at low power density BIB HAL
Effect of evolution of powders on a-Si:H samples in silane-argon plasma at low power density BIB HAL
Namita Dutta Gupta, Christophe Longeaud, A. Bhaduri, P. Chaudhuri, Vignoli, S, O. Marty
(2005)
Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films BIB HAL
Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films BIB HAL
M. Meaudre, Marie-Estelle Gueunier-Farret, R. Meaudre, Jean-Paul Kleider, Vignoli, S, B. Canut
Journal of Applied Physics, vol. 98, p. 33531, (2005)
Some Properties of amorphous carbon films deposited on the grounded electrode of a RF-PECVD reactor from Ar-CH4 mixtures BIB HAL
Some Properties of amorphous carbon films deposited on the grounded electrode of a RF-PECVD reactor from Ar-CH4 mixtures BIB HAL
Namita Dutta Gupta, Christophe Longeaud, P. Chaudhuri, A. Bhaduri, Vignoli, S
(2005)
Study of powders formed at low power in a silane-argon discharge and their effect on the properties of hydrogenated amorphous silicon thin films BIB HAL
Study of powders formed at low power in a silane-argon discharge and their effect on the properties of hydrogenated amorphous silicon thin films BIB HAL
P. Chaudhuri, Namita Dutta Gupta, A. Bhaduri, Christophe Longeaud, Vignoli, S, O. Marty
Journal of Applied Physics, vol. 98, p. 44913, (2005)
A simple model to describe AC electronic charge transport in hydrogenated microcrystalline silicon BIB HAL DOI
A simple model to describe AC electronic charge transport in hydrogenated microcrystalline silicon DOI BIB HAL
R. Meaudre, M. Meaudre, Vignoli, S
Materials Science and Engineering: B, vol. 94, p. 264-268, (2002)
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon BIB HAL DOI
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon DOI BIB HAL
Vignoli, S, A Fontcuberta I Morral, R Butté, R Meaudre, M Meaudre
Journal of Non-Crystalline Solids, vol. 299-302, p. 220-225, (2002)
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon BIB HAL DOI
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon DOI BIB HAL
Vignoli, S, A Fontcuberta I Morral, R Butté, R Meaudre, M Meaudre
Journal of Non-Crystalline Solids, vol. 299-302, p. 220-225, (2002)
Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents BIB HAL DOI
Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents DOI BIB HAL
M Meaudre, R Meaudre, Vignoli, S, O Marty
Journal of Non-Crystalline Solids, vol. 299-302, p. 626-631, (2002)
Thermoelectric power in undoped hydrogenated polymorphous silicon BIB HAL DOI
Thermoelectric power in undoped hydrogenated polymorphous silicon DOI BIB HAL
R. Meaudre, M. Meaudre, R. Butté, Vignoli, S
Thin Solid Films, vol. 366, p. 207-210, (2000)
Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation BIB HAL DOI
Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation DOI BIB HAL
R. Meaudre, M. Meaudre, R. Butte, Vignoli, S
Philosophical Magazine Letters, vol. 79, p. 763-769, (1999)
DC conduction in diamond-like carbon films obtained by low-energy cluster beam deposition BIB HAL DOI
DC conduction in diamond-like carbon films obtained by low-energy cluster beam deposition DOI BIB HAL
V. Paillard, M. Meaudre, P. Melinon, V. Dupuis, J.P. Perez, Vignoli, S, A. Perez, R. Meaudre
Journal of Non-Crystalline Solids, vol. 191, p. 174-183, (1995)
Thermal annealing of light-induced defects in p - i - p and n - i - n hydrogenated amorphous silicon structures: Influence of hole and electron injection BIB HAL DOI
Thermal annealing of light-induced defects in p - i - p and n - i - n hydrogenated amorphous silicon structures: Influence of hole and electron injection DOI BIB HAL
M. Meaudre, R. Meaudre, Vignoli, S
Journal of Applied Physics, vol. 77, p. 5702-5705, (1995)
Equilibrium temperature in intrinsic hydrogenated amorphous silicon under illumination BIB HAL DOI
Equilibrium temperature in intrinsic hydrogenated amorphous silicon under illumination DOI BIB HAL
Vignoli, S, R. Meaudre, M. Meaudre
Physical Review B, vol. 50, p. 7378-7383, (1994)
Rate equation for metastable defects in hydrogenated amorphous silicon: The form of the light-induced annealing term BIB HAL DOI
Rate equation for metastable defects in hydrogenated amorphous silicon: The form of the light-induced annealing term DOI BIB HAL
R. Meaudre, M. Meaudre, Vignoli, S
Physical Review B, vol. 49, p. 1716-1719, (1994)
Kinetics of defect creation in hydrogenated amorphous silicon by light pulses BIB HAL DOI
Kinetics of defect creation in hydrogenated amorphous silicon by light pulses DOI BIB HAL
R. Meaudre, Vignoli, S, M. Meaudre, L. Chanel
Philosophical Magazine Letters, vol. 68, p. 159-165, (1993)
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