Profil

Stéphane VIGNOLI
Nom:
Name:
VIGNOLI Stéphane
Equipe(s):
Team(s):
  • Transport, Nanomagnétisme et Matériaux pour l'Énergie
Position:
Enseignant-chercheur
Bureau(x):
Office(s):
  • BRILLOUIN / 3ème / 13-022A
Mel:
Mail:
stephane.vignoli@univ-lyon1.fr
Tél(s):
Phone(s):
  • 0472432958

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Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1−xGax)Se2 thin films versus optical band gap
Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1−xGax)Se2 thin films versus optical band gap
G.H. Bauer, R. Brüggemann, S. Tardon, Vignoli, S, R. Kniese
Thin Solid Films, vol. 480-481, p410-414 (2005)
Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties
Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties
Vignoli, S, P. Mélinon, Bruno Masenelli, Pere Roca I Cabarrocas, A.M. Flank, Christophe Longeaud
Journal of Physics: Condensed Matter, vol. 17, p1279-1288 (2005)
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
Vignoli, S, A Fontcuberta I Morral, R Butté, R Meaudre, M Meaudre
Journal of Non-Crystalline Solids, vol. 299-302, p220-225 (2002)
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
Vignoli, S, A Fontcuberta I Morral, R Butté, R Meaudre, M Meaudre
Journal of Non-Crystalline Solids, vol. 299-302, p220-225 (2002)
Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents
Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents
M Meaudre, R Meaudre, Vignoli, S, O Marty
Journal of Non-Crystalline Solids, vol. 299-302, p626-631 (2002)
A simple model to describe AC electronic charge transport in hydrogenated microcrystalline silicon
A simple model to describe AC electronic charge transport in hydrogenated microcrystalline silicon
R. Meaudre, M. Meaudre, Vignoli, S
Materials Science and Engineering: B, vol. 94, p264-268 (2002)
Thermoelectric power in undoped hydrogenated polymorphous silicon
Thermoelectric power in undoped hydrogenated polymorphous silicon
R. Meaudre, M. Meaudre, R. Butté, Vignoli, S
Thin Solid Films, vol. 366, p207-210 (2000)
Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation
Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation
R. Meaudre, M. Meaudre, R. Butte, Vignoli, S
Philosophical Magazine Letters, vol. 79, p763-769 (1999)
Thermal annealing of light-induced defects in p - i - p and n - i - n hydrogenated amorphous silicon structures: Influence of hole and electron injection
Thermal annealing of light-induced defects in p - i - p and n - i - n hydrogenated amorphous silicon structures: Influence of hole and electron injection
M. Meaudre, R. Meaudre, Vignoli, S
Journal of Applied Physics, vol. 77, p5702-5705 (1995)
DC conduction in diamond-like carbon films obtained by low-energy cluster beam deposition
DC conduction in diamond-like carbon films obtained by low-energy cluster beam deposition
V. Paillard, M. Meaudre, P. Melinon, V. Dupuis, J.P. Perez, Vignoli, S, A. Perez, R. Meaudre
Journal of Non-Crystalline Solids, vol. 191, p174-183 (1995)
Equilibrium temperature in intrinsic hydrogenated amorphous silicon under illumination
Equilibrium temperature in intrinsic hydrogenated amorphous silicon under illumination
Vignoli, S, R. Meaudre, M. Meaudre
Physical Review B, vol. 50, p7378-7383 (1994)
Rate equation for metastable defects in hydrogenated amorphous silicon: The form of the light-induced annealing term
Rate equation for metastable defects in hydrogenated amorphous silicon: The form of the light-induced annealing term
R. Meaudre, M. Meaudre, Vignoli, S
Physical Review B, vol. 49, p1716-1719 (1994)
Kinetics of defect creation in hydrogenated amorphous silicon by light pulses
Kinetics of defect creation in hydrogenated amorphous silicon by light pulses
R. Meaudre, Vignoli, S, M. Meaudre, L. Chanel
Philosophical Magazine Letters, vol. 68, p159-165 (1993)
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