Séminaire Institut

Friday 6 May 2011 à 14h00.

Atomic Electronics with Schottky-Barrier MOSFETs

''In the past decade the shrinking dimensions of traditional transistors and the advances towards quantum computing have created interest in exploring /atomic electronics/, in which a single or a few dopants are used to realize conceptually new devices. In this context, we explore electron transport through dopant atoms using a novel silicon transistor, theSchottky barrier MOSFET, in which the source and drain of a conventional MOSFET are replaced with metallic contacts. At low temperatures transport is limited by direct tunneling through the depletion width formed near the metal/semiconductor interface. A dopant (or small cluster of dopants) localized in this region results in resonances in the differential conductance and thusdetailed spectroscopic investigationscan be carried out.In this seminar we present measurements exploring Pt and B atoms as well as novel quantum interference effects that are also observed.''