Profil

Alban GASSENQ
Nom:
Name:
GASSENQ Alban
Equipe(s):
Team(s):
  • Matériaux et Nanostructures Photoniques
Position:
Enseignant-chercheur
Bureau(x):
Office(s):
  • KASTLER / 4ème / 14-004
Mel:
Mail:
alban.gassenq@univ-lyon1.fr
Tél(s):
Phone(s):
  • 0472431208

1/2

Suiv.

Dernière page

Infrared micro-emitters made by pulsed laser deposition lift-off-based processing
Infrared micro-emitters made by pulsed laser deposition lift-off-based processing
Alban Gassenq, Yannick Guyot, E. Cleyet-Merle, Sébastien Cueff, Hai Son Nguyen, A. Pereira
Applied physics. A, Materials science & processing, vol. 129, p268 (2023)
High-Responsivity Planar Photodetector Based on Methylammonium Lead Bromide Perovskite Thin Film
High-Responsivity Planar Photodetector Based on Methylammonium Lead Bromide Perovskite Thin Film
Pavlo Mai, Julien Houel, Nathan Dreveton, Benoit Mahler, Alban Gassenq
Photonics, vol. 10, p1043 (2023)
Diffraction grating enhanced photoluminescence from etching-free erbium thin films
Diffraction grating enhanced photoluminescence from etching-free erbium thin films
Alban Gassenq, H-S Nguyen, E. Cleyet-Merle, Sébastien Cueff, A. Pereira
Optics Letters, vol. 48, p2893 (2023)
Confined Tamm plasmon light-emitting diodes
Confined Tamm plasmon light-emitting diodes
Clémentine Symonds, V. Toanen, Alban Gassenq, Jean-Michel Benoit, Antonio A. Pereira, Etienne Cleyet-Merle, Rémy Fulcrand, François Bessueille, S. Minot, Martina Morassi, Aristide Lemaître, Joel Bellessa
Applied Physics Letters, vol. 122 (2023)
Plasmon-Mediated Energy Transfer between Two Systems out of Equilibrium
Plasmon-Mediated Energy Transfer between Two Systems out of Equilibrium
Camilo R Pérez de la Vega, Elise Bailly, Kévin Chevrier, B. Vest, Jean-Paul Hugonin, Antoine Bard, Alban Gassenq, Clémentine Symonds, Jean-Michel Benoit, Joel Bellessa, Jean-Jacques Greffet, Yannick De Wilde, Valentina Krachmalnicoff
ACS photonics, vol. 10, p1169-1176 (2023)
Infrared and visible micro-emitters made by lift-off processing in pulsed laser deposited layers
Infrared and visible micro-emitters made by lift-off processing in pulsed laser deposited layers
Alban Gassenq, Etienne Cleyet-Merle, Yannick Guyot, Hai Son Nguyen, Sébastien Cueff, Antonio A. Pereira
, pIW2B.4 (2022)
Raman investigation of local photo‐bleaching in TDBC dye layer for photonics applications
Raman investigation of local photo‐bleaching in TDBC dye layer for photonics applications
Alban Gassenq, Yves Pipon, Gilles Montagnac, Olivier Boisron, Valérie Martinez, Antoine Bard, Jean‐michel Benoit, Clémentine Symonds, Joel Bellessa
Journal of Raman Spectroscopy, vol. 53, p755-761 (2022)
SiN half-etch horizontal slot waveguides for integrated photonics: numerical modeling, fabrication, and characterization of passive components
SiN half-etch horizontal slot waveguides for integrated photonics: numerical modeling, fabrication, and characterization of passive components
Eva Kempf, Pedro Rojo Romeo, Alban Gassenq, Arnaud Taute, Paul Chantraine, Jimmy John, Ali Belarouci, Stephane Monfray, Frederic Boeuf, Paul G. Charette, Régis Orobtchouk
Optics Express, vol. 30, p4202-4214 (2022)
Extended Hybridization and Energy Transfer in Periodic Multi‐Material Organic Structures in Strong Coupling with Surface Plasmon
Extended Hybridization and Energy Transfer in Periodic Multi‐Material Organic Structures in Strong Coupling with Surface Plasmon
Antoine Bard, Sylvain Minot, Clémentine Symonds, Jean‐Michel Benoit, Alban Gassenq, François Bessueille, Bruno Andrioletti, Camilo Perez, Kévin Chevrier, Yannick de Wilde, Valentina Krachmalnicoff, Joel Bellessa
Advanced Optical Materials, p2200349 (2022)
Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate
Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate
Alban Gassenq, Etienne Cleyet-Merle, Hoshang Sahib, Bruno Baguenard, Ali Belarouci, Régis Orobtchouk, Frederic Lerouge, Stephan Guy, Antonio A. Pereira
Optics Express, vol. 29, p7321-7326 (2021)
Study of dye local photo-bleaching obtained by UV lithography for photonics applications
Study of dye local photo-bleaching obtained by UV lithography for photonics applications
Alban Gassenq, Kevin Chevrier, Antoine Bard, Jean-Michel Benoit, Clémentine Symonds, Joel Bellessa
, p1-1 (2021)
Selective grating obtained by dye micro-structuration based on local photo- bleaching using laser writer
Selective grating obtained by dye micro-structuration based on local photo- bleaching using laser writer
Alban Gassenq, Kevin Chevrier, Antoine Bard, Jean-Michel Benoit, Clémentine Symonds, Joël Bellessa
Applied optics, vol. 59, p5697-5701 (2020)
Room-Temperature Lasing in a Low-Loss Tamm Plasmon Cavity
Room-Temperature Lasing in a Low-Loss Tamm Plasmon Cavity
Vincent Toanen, Clémentine Symonds, Jean-Michel Benoit, Alban Gassenq, Aristide Lemaître, Joël Bellessa
ACS photonics, vol. 7, p2952-2957 (2020)
Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4
Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4
Thibault Haffner, Mohammed Zeghouane, Franck Bassani, P. Gentile, Alban Gassenq, Fares Chouchane, Nicolas Pauc, Eugénie Martinez, Eric Robin, S. David, T. Baron., Bassem Salem
physica status solidi (a), vol. 215, p1700743 (2018)
Accurate strain measurements in highly strained Ge microbridges
Accurate strain measurements in highly strained Ge microbridges
Alban Gassenq, S. Tardif, Kevin Guilloy, G. Osvaldo Dias, Nicolas Pauc, Ivan Duchemin, Denis Rouchon, Jean-Michel Hartmann, Julie Widiez, Jose Escalante, Yann Michel Niquet, R. Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Alexei Chelnokov, François Rieutord, Vincent Reboud, Vincent Calvo
Applied Physics Letters, vol. 108, p241902 (2016)
Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain
Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain
Kevin Guilloy, Nicolas Pauc, Alban Gassenq, Yann-Michel Niquet, Jose-Maria Escalante, Ivan Duchemin, S. Tardif, Guilherme Osvaldo Dias, Denis Rouchon, Julie Widiez, Jean-Michel Hartmann, Richard Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo
ACS photonics, vol. 3, p1907-1911 (2016)
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content
Alban Gassenq, L. Milord, J. Aubin, Kevin Guilloy, S. Tardif, Nicolas Pauc, Johan Rothman, Alexei Chelnokov, Jean-Michel Hartmann, Vincent Reboud, Vincent Calvo
Applied Physics Letters, vol. 109, p242107 (2016)
Scroll To Top