Profil

Alban GASSENQ
Nom:
Name:
GASSENQ Alban
Equipe(s):
Team(s):
  • Matériaux et Nanostructures Photoniques
Position:
Enseignant-chercheur
Bureau(x):
Office(s):
  • KASTLER / 4ème / 14-004
Mel:
Mail:
alban.gassenq@univ-lyon1.fr
Tél(s):
Phone(s):
  • 0472431208

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Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain
Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain
Kevin Guilloy, Nicolas Pauc, Alban Gassenq, Yann-Michel Niquet, Jose-Maria Escalante, Ivan Duchemin, S. Tardif, Guilherme Osvaldo Dias, Denis Rouchon, Julie Widiez, Jean-Michel Hartmann, Richard Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo
ACS photonics, vol. 3, p1907-1911 (2016)
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content
Alban Gassenq, L. Milord, J. Aubin, Kevin Guilloy, S. Tardif, Nicolas Pauc, Johan Rothman, Alexei Chelnokov, Jean-Michel Hartmann, Vincent Reboud, Vincent Calvo
Applied Physics Letters, vol. 109, p242107 (2016)
Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications
Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications
Kévin Guilloy, Alban Gassenq, N. Pauc, J.M. Escalante, I. Duchemin, Yann-Michel Niquet, S. Tardif, François Rieutord, P. Gentile, Guilherme Osvaldo Dias, D. Rouchon, Julie Widiez, J.M. Hartmann, D. Fowler, Alexei Chelnokov, Richard Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, V. Reboud, Vincent Calvo
(2016)
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
S. Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme Osvaldo Dias, Jean-Michel Hartmann, Julie Widiez, Thomas Zabel, Esteban Marin, Hans Sigg, Jerome Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, Jean-Sébastien Micha, Odile Robach, François Rieutord
Journal of Applied Crystallography, vol. 49, p1402-1411 (2016)
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
Nicolas Pauc, Denis Rouchon, Jean-Michel Hartmann, Julie Widiez, S. Tardif, François Rieutord, Jose-Maria Escalante, Ivan Duchemin, Yann Michel Niquet, R. Geiger, Thomas Zabel, H. Sigg, J. Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, Alban Gassenq, Kevin Guilloy, G. Osvaldo Dias
Applied Physics Letters, vol. 107, p191904 (2015)
Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction
Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction
Kevin Guilloy, Nicolas Pauc, Alban Gassenq, P. Gentile, S. Tardif, François Rieutord, Vincent Calvo
Nano Letters, vol. 15, p2429-2433 (2015)
Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range
Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range
Roel Roelkens, Utsav Dave, Alban Gassenq, Nannicha Hattasan, Chen Hu, Bart Kuyken, Francois Leo, Aditya Malik, Muhammad Muneeb, Eva Ryckeboer, Dorian Sanchez, Sarah Uvin, Ruijun Wang, Zeger Hens, Roel Baets, Yosuke Shimura, Federica Gencarelli, Benjamin Vincent, Roger Loo, Joris van Campenhout, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Xia Chen, Milos Nedeljkovic, Goran Z. Mashanovich, Li Shen, Noel Healy, Anna C. Peacock, Xiaoping Liu, Richard Osgood, William M. J. Green
IEEE Journal of Selected Topics in Quantum Electronics, vol. 20, p394 - 404 (2014)
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared
Roel Roelkens, Utsav Dave, Alban Gassenq, Nannicha Hattasan, Chen Chen, Bart Kuyken, Francois Leo, Aditya Malik, Muhammad Muneeb, Eva Ryckeboer, Sarah Uvin, Zeger Hens, Roel Baets, Yosuke Shimura, Federica Gencarelli, Benjamin Vincent, Roger Loo, Joris van Campenhout, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Xia Chen, Milos Nedeljkovic, Goran Z. Mashanovich, Li Shen, Noel Healy, Anna C. Peacock, Xiaoping Liu, Richard Osgood, William Green
Optical Materials Express, vol. 3 (2013)
III–V/Silicon Photonics for Short-Wave Infrared Spectroscopy
III–V/Silicon Photonics for Short-Wave Infrared Spectroscopy
Günther Roelkens, William M. J. Green, Bart Kuyken, Xiaoping Liu, Nannicha Hattasan, Alban Gassenq, Laurent Cerutti, Jean-Baptiste Rodriguez, Richard M. Osgood, Eric Tournié, Roel G. Baets
IEEE Journal of Quantum Electronics, vol. 48, p292 - 298 (2012)
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip
Alban Gassenq, Nannicha Hattasan, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Günther Roelkens
Optics Express, vol. 20 (2012)
Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit
Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit
Nannicha Hattasan, Alban Gassenq, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Günther Roelkens
IEEE Photonics Technology Letters, vol. 23, p1760 - 1762 (2011)
Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction
Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction
Arnaud Ducanchez, Laurent Cerutti, Alban Gassenq, Pierre Grech, Frédéric Genty
IEEE Journal of Selected Topics in Quantum Electronics, vol. 14, p1014 - 1021 (2008)
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