Profil

Nom:
Name:
GASSENQ Alban
Equipe(s):
Team(s):
  • Matériaux et Nanostructures Photoniques
Position:
Enseignant-chercheur
Bureau(x):
Office(s):
  • KASTLER / 4ème / 14-004
Mel:
Mail:
alban.gassenq@univ-lyon1.fr
Tél(s):
Phone(s):
  • 0472431208
Plasmon-Mediated Energy Transfer between Two Systems out of Equilibrium
Camilo R Pérez de la Vega, Elise Bailly, Kévin Chevrier, B. Vest, Jean-Paul Hugonin, Antoine Bard, Alban Gassenq, Clémentine Symonds, Jean-Michel Benoit, Joel Bellessa, Jean-Jacques Greffet, Yannick De Wilde, Valentina Krachmalnicoff
ACS photonics, vol. 10, p1169-1176 (2023)
Infrared micro-emitters made by pulsed laser deposition lift-off-based processing
Alban Gassenq, Yannick Guyot, E. Cleyet-Merle, Sébastien Cueff, Hai Son Nguyen, A. Pereira
Applied physics. A, Materials science & processing, vol. 129, p268 (2023)
High-Responsivity Planar Photodetector Based on Methylammonium Lead Bromide Perovskite Thin Film
Pavlo Mai, Julien Houel, Nathan Dreveton, Benoit Mahler, Alban Gassenq
Photonics, vol. 10, p1043 (2023)
Diffraction grating enhanced photoluminescence from etching-free erbium thin films
Alban Gassenq, H-S Nguyen, E. Cleyet-Merle, Sébastien Cueff, A. Pereira
Optics Letters, vol. 48, p2893 (2023)
Confined Tamm plasmon light-emitting diodes
Clémentine Symonds, V. Toanen, Alban Gassenq, Jean-Michel Benoit, Antonio A. Pereira, Etienne Cleyet-Merle, Rémy Fulcrand, François Bessueille, S. Minot, Martina Morassi, Aristide Lemaître, Joel Bellessa
Applied Physics Letters, vol. 122 (2023)
Infrared and visible micro-emitters made by lift-off processing in pulsed laser deposited layers
, pIW2B.4 (2022)
Raman investigation of local photo‐bleaching in TDBC dye layer for photonics applications
Alban Gassenq, Yves Pipon, Gilles Montagnac, Olivier Boisron, Valérie Martinez, Antoine Bard, Jean‐michel Benoit, Clémentine Symonds, Joel Bellessa
Journal of Raman Spectroscopy, vol. 53, p755-761 (2022)
SiN half-etch horizontal slot waveguides for integrated photonics: numerical modeling, fabrication, and characterization of passive components
Eva Kempf, Pedro Rojo Romeo, Alban Gassenq, Arnaud Taute, Paul Chantraine, Jimmy John, Ali Belarouci, Stephane Monfray, Frederic Boeuf, Paul G. Charette, Régis Orobtchouk
Optics Express, vol. 30, p4202-4214 (2022)
Extended Hybridization and Energy Transfer in Periodic Multi‐Material Organic Structures in Strong Coupling with Surface Plasmon
Antoine Bard, Sylvain Minot, Clémentine Symonds, Jean‐Michel Benoit, Alban Gassenq, François Bessueille, Bruno Andrioletti, Camilo Perez, Kévin Chevrier, Yannick de Wilde, Valentina Krachmalnicoff, Joel Bellessa
Advanced Optical Materials, p2200349 (2022)
Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate
Alban Gassenq, Etienne Cleyet-Merle, Hoshang Sahib, Bruno Baguenard, Ali Belarouci, Régis Orobtchouk, Frederic Lerouge, Stephan Guy, Antonio A. Pereira
Optics Express, vol. 29, p7321-7326 (2021)
Study of dye local photo-bleaching obtained by UV lithography for photonics applications
Alban Gassenq, Kevin Chevrier, Antoine Bard, Jean-Michel Benoit, Clémentine Symonds, Joel Bellessa
, p1-1 (2021)
Selective grating obtained by dye micro-structuration based on local photo- bleaching using laser writer
Alban Gassenq, Kevin Chevrier, Antoine Bard, Jean-Michel Benoit, Clémentine Symonds, Joël Bellessa
Applied optics, vol. 59, p5697-5701 (2020)
Room-Temperature Lasing in a Low-Loss Tamm Plasmon Cavity
Vincent Toanen, Clémentine Symonds, Jean-Michel Benoit, Alban Gassenq, Aristide Lemaître, Joël Bellessa
ACS photonics, vol. 7, p2952-2957 (2020)
Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4
Thibault Haffner, Mohammed Zeghouane, Franck Bassani, P. Gentile, Alban Gassenq, Fares Chouchane, Nicolas Pauc, Eugénie Martinez, Eric Robin, S. David, T. Baron., Bassem Salem
physica status solidi (a), vol. 215, p1700743 (2018)
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
S. Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme Osvaldo Dias, Jean-Michel Hartmann, Julie Widiez, Thomas Zabel, Esteban Marin, Hans Sigg, Jerome Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, Jean-Sébastien Micha, Odile Robach, François Rieutord
Journal of Applied Crystallography, vol. 49, p1402-1411 (2016)
Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications
Kévin Guilloy, Alban Gassenq, N. Pauc, J.M. Escalante, I. Duchemin, Yann-Michel Niquet, S. Tardif, François Rieutord, P. Gentile, Guilherme Osvaldo Dias, D. Rouchon, Julie Widiez, J.M. Hartmann, D. Fowler, Alexei Chelnokov, Richard Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, V. Reboud, Vincent Calvo
(2016)
Accurate strain measurements in highly strained Ge microbridges
Alban Gassenq, S. Tardif, Kevin Guilloy, G. Osvaldo Dias, Nicolas Pauc, Ivan Duchemin, Denis Rouchon, Jean-Michel Hartmann, Julie Widiez, Jose Escalante, Yann Michel Niquet, R. Geiger, Thomas Zabel, Hans Sigg, Jerome Faist, Alexei Chelnokov, François Rieutord, Vincent Reboud, Vincent Calvo
Applied Physics Letters, vol. 108, p241902 (2016)
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